Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials
American Journal of Physics and Applications
Volume 7, Issue 2, March 2019, Pages: 34-42
Received: Jan. 23, 2019; Accepted: Mar. 5, 2019; Published: Mar. 21, 2019
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Author
Murielle Béranger, Process Department, Trixell, Moirans, France
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Abstract
Energy dispersive X-Ray detectors are among the most common tools installed on scanning electron microscopes and, as they are sensitive to light, they can be used to get panchromatic cathodoluminescence information. This article presents practical considerations about the parameters to choose to obtain a good cathodoluminescence signal on a silicon drift detector. Probe current is the most important but other parameters of electron microscope and energy dispersive X-Ray detector are also explored. Filament brightness, if not fixed, influences the number of electrons incident on the sample and modifies cathodoluminescence response. Beam voltage and working distance must be adapted to the sample and to the electron microscope geometry. Acquisition and shaping times are important parameters for spectrum quality: the high sensitivity of silicon drift detector to light allows the use of low acquisition times and high shaping times. As cathodoluminescent materials are mostly high band gap materials, charge effects can influence their response and the size of the acquisition area must be carefully chosen. The influence of all these parameters is studied through two scintillating materials. Some examples of application are described to show the potential of this method. They include localization of luminescent particles, a demonstration of the effect of strong electron beam on a needle of material and the characterization of light emitted by a structural defect in a scintillator material.
Keywords
Cathodoluminescence, Energy Dispersive X-Ray Detector, Silicon Drift Detector, Luminescent Material
To cite this article
Murielle Béranger, Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials, American Journal of Physics and Applications. Vol. 7, No. 2, 2019, pp. 34-42. doi: 10.11648/j.ajpa.20190702.11
Copyright
Copyright © 2019 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
References
[1]
P. Lechner, C. Fiorini, R. Hartmann, J. Kemmer, N. Krause et al., “Silicon drift detectors for high count rate X-ray spectroscopy at room temperature”, NIM vol. A458, pp. 281- 287, 2001.
[2]
P. Lechner, C. Fiorini, A. Longoni, G. Lutz, A. Pahlke et al., “Silicon drift detectors for high resolution, high count rate X-ray spectroscopy at room temperature” Advances in X-ray Analysis Vol. 47, pp. 53-58, 2004.
[3]
D. E. Newbury, “X-ray spectrometry and spectrum image mapping at output count rates above 100 kHz with a silicon drift detector on a scanning electron microscope”, Scanning vol. 27, pp. 227–239, 2005.
[4]
T. Nylese, J. Rafaelsen, “Improvements in SDD Efficiency – From X-ray Counts to Data”, Microscopy Today, vol. 25-2, pp. 46–53, 2017.
[5]
A. Liebel, A. Schöning, A. Bechteler, K. Hermenau, K. Heinzinger, L. Strüder, A. Niculae1, H. Soltau1, “Silicon Drift Detectors in Electron Microscopy – An Over 20 Year History with a Bright Future”, Microsc. Microanal. 24 - Suppl 1, pp. 796-797, 2018.
[6]
S. Burgess, X. Li, J. Holland, “High spatial resolution energy dispersive X-ray spectrometry in the SEM and the detection of light elements including lithium”, Microscopy and Analysis vol. 27-4, pp. 8-13, May 2013.
[7]
R. Terborg, A. Kaeppel, B. Yu, M. Patzschke, T. Salge, M. Falke, ”Advanced Chemical Analysis Using an Annular Four-Channel Silicon Drift Detector”, Microsc. Today vol. 25-2, pp. 30-35, 2017.
[8]
N. Brodusch, H. Demers, R. Gauvin, ”X-Ray Imaging with a Silicon Drift Detector Energy Dispersive Spectrometer” in “Field Emission Scanning Electron Microscopy”, Springer: Singapore, Briefs in Applied Sciences and Technology, 2018. pp. 67-84.
[9]
S. Burgess, J. Sagar, J. Holland, X. Li, F. Bauer, “Ultra-Low kV EDS – A New Approach to Improved Spatial Resolution, Surface Sensitivity, and Light Element Compositional Imaging and Analysis in the SEM”, Microsc. Today vol. 25-2, pp. 20-28, 2017.
[10]
J. Rafaelsen, T. Nylese, M. Bolorizadeh, V. Carlino,”Windowless, Silicon Nitride window and Polymer window EDS detectors: Changes in Sensitivity and Detectable Limits”, Microsc. Microanal. 21- Suppl 3, pp. 1645-19646, 2015.
[11]
P. F. Smet, J. E. Van Haecke, D. Poelman, “Spatially resolved cathodoluminescence of luminescent materials using an EDX detector”, Journal of Microscopy Vol. 231-1, pp. 1-8, July 2008.
[12]
M. Béranger, “Use of a silicon drift detector for cathodoluminescence detection”, Microelectronics Reliability vol. 55, 1569–1573, 2015.
[13]
Oxford Instruments, “Silicon drift detectors explained”, Application note, 2012, pp. 2-27.
[14]
A. Kenik, “Evaluating the performance of a commercial silicon drift detector for X-ray microanalysis”, Microsc. Today vol. 19-3, pp. 40–46, 2011.
[15]
P. Lecoq, A. Annenkov, A. Gektin, M. Korzhik, C. Pedrini, Inorganic Scintillators for Detector Systems : physical principles and crystal engineering, Springer: Berlin, 2006, pp. 54–59.
[16]
G. Blasse, B. C. Grabmaier, Luminescent Materials, Springer-Verlag: Berlin Heidelberg, 1994, pp. 40–45.
[17]
G. R. Leiker, “Design and construction of a high power electron gun”, M. S. Thesis, faculty of Texas, pp. 6-17, 1984.
[18]
T Koshikawa and R Shimizu, “A Monte Carlo calculation of low-energy secondary electron emission from metals”, J. Phys. D Appl. Phys. 7, pp. 1303-1315, 1974.
[19]
W. Vanderlinde, “Scanning electron microscopy”, in “Microelectronics failure analysis”, Ed. The Electronic Device Failure Analysis Society Desk Reference Committee, 2004, pp. 559-573.
[20]
K. Y. Lai, M. A. L. Johnson, T. Paskova, A. D. Hanser, K. Udwary, E. A. Preble, and K. R. Evans,” Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing”, Phys. Status Solidi C 6- S2, pp. S325–S328, 2009.
[21]
F. Bresse, G. Remondz., B. Akamatsu, “Cathodoluminescence Microscopy and Spectroscopy of Semiconductors and Wide Bandgap Insulating Materials”, Mikrochim. Acta Suppl. 13, pp. 135-166, 1996.
[22]
M. R. Phillips, H. Telg, S. O. Kucheyev, Olaf Gelhausen, M. Toth, “Cathodoluminescence Efficiency Dependence on Excitation Density in n-Type Gallium Nitride”, Microsc. Microanal. 9, pp. 144–151, 2003.
[23]
Paul Harris, Daniel den Engelsen, Terry Ireland, George Fern and Jack Silver, “Cathodoluminescence studies of phosphors in a scanning electron microscope”, Journal of Physics: Conference Series 619, pp. 1-4, 2015.
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