Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis
American Journal of Physics and Applications
Volume 2, Issue 3, May 2014, Pages: 83-87
Received: May 18, 2014; Accepted: Jun. 7, 2014; Published: Jun. 20, 2014
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Authors
Musaver Musayev, Department of Physics, Azerbaijan State Oil Academy, Baku, Azerbaijan
Sedreddin Axmedov, Institute of Physics of Azerbaijan NAS, Baku, Azerbaijan
Gurban Axmedov, Institute of Physics of Azerbaijan NAS, Baku, Azerbaijan
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Abstract
As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices. The effect of conditions of precipitation on clarifying properties SiOх of surface slicks for thermophotovoltaic elements on a basis Bi2Se3 and Bi2Te3 is probed. The comparison with values of a current density of short-circuit raw of thermophotovoltaic elements is conducted. The augmentation of a current density with body height of concentration of oxygen in a mixed gas is exhibited during precipitation of a film that is explained by smaller absorption of a light in a film. For the maximal augmentation of a current of short-circuit of thermophotovoltaic elements the optimum thickness of optical stratums is defined.
Keywords
Thin Film, P-N the Structures, Component, Thermophotovoltaic Elements, Surface
To cite this article
Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov, Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis, American Journal of Physics and Applications. Vol. 2, No. 3, 2014, pp. 83-87. doi: 10.11648/j.ajpa.20140203.13
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