Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s
American Journal of Physics and Applications
Volume 1, Issue 1, July 2013, Pages: 18-24
Received: May 21, 2013; Published: Jun. 30, 2013
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Authors
S. Bouzgarrou, Laboratoire de Microélectronique et Instrumentation (UR 03/13-04), Faculté des Sciences de Monastir, Avenue de l'Environnement 5000 Monastir, Tunisia; Qassim University, Faculty of Sciences, Saoudi Arabia
M. M. Ben Salem, Laboratoire de Physique des semiconducteurs et des Composants Electroniques (LA-MA-06), Faculté des Sciences de Monastir, Avenue de Environnement 5000 Monastir, Tunisia
A. Kalboussi, Laboratoire de Microélectronique et Instrumentation (UR 03/13-04), Faculté des Sciences de Monastir, Avenue de l'Environnement 5000 Monastir, Tunisia
A. Souifi, Institut de Nanotechnologie de Lyon (INL) « site INSA », INSA de Lyon, Bât. Blaise Pascal, 7 Avenue Jean capelle, 69621 Villeurbanne (cedex), France
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Abstract
A detailed study of electrically active defects present in InAlAs/InP heterostructure and InAlAs/InGaAs/InP High Electron Mobility Transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) is presented. Current and capacitance Deep Level Transient Spectroscopy (I-DLTS and C-DLTS) techniques are used for the identification of active electrical defects. A notable correlation between deep levels observed by I -DLTS and C-DLTS results and the contribution of parasitic effects (Kink and Hysteresis effects) on output characteristics was evidenced. A new model for Kink effect is presented on InAlAs / InGaAs / InP HEMT’s. This model uses a new polynomial dependence of sheet carrier concentration, on bias and temperature of device structure to calculate Ids – Vds characteristics. The simulation model enables us to confirm that the Kink parasitic effect in Ids – Vds characteristics is strongly correlated by trapping and detrapping mechanisms. Experimental and theoretical results obtained by the new model are in good agreement.
Keywords
DLTS, I-DLTS, Ids-Vds, PL, Kink Effect, HEMT
To cite this article
S. Bouzgarrou, M. M. Ben Salem, A. Kalboussi, A. Souifi, Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s, American Journal of Physics and Applications. Vol. 1, No. 1, 2013, pp. 18-24. doi: 10.11648/j.ajpa.20130101.14
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