Optimizing the Performance of Metal-Semiconductor-Metal Photodetectors by Embedding Nanoparticles in the Absorption Layer
Journal of Electrical and Electronic Engineering
Volume 3, Issue 2-1, March 2015, Pages: 78-82
Received: Jan. 16, 2015; Accepted: Jan. 19, 2015; Published: Feb. 12, 2015
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Author
Mahsa Naghipour, Sama Technical and Vocational College, Islamic Azad University, Miyandoab Branch, Miyandoab, Iran
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Abstract
Metal-Semiconductor-Metal is one of the photodetectors that uses in optical detection. The characteristic of these detectors is improved by Plasmonic Science. Some of these characteristics include higher sensitivity, greater efficiency and improved optical absorption coefficient. Our predictions and the numerical results show high absorption in plasma-based combination of Metal-Semiconductor-Metal photodetectors in embedded Nano-grating and Metallic nanoparticles. The results of the simulation using FDTD simulation software shows that by optimizing the Nano grating metal parameters and embedded metallic nanoparticles, higher electric field is obtained, leading to higher absorption compared with the conventional Metal-Semiconductor-Metal detector. This higher absorption is because of the higher ability of embedded metallic nanoparticles in absorbing the light and scattering properties by conduction electrons via stimulated resonance light from metallic nanoparticles.
Keywords
Absorption, Nanoparticles, Plasma
To cite this article
Mahsa Naghipour, Optimizing the Performance of Metal-Semiconductor-Metal Photodetectors by Embedding Nanoparticles in the Absorption Layer, Journal of Electrical and Electronic Engineering. Special Issue: Research and Practices in Electrical and Electronic Engineering in Developing Countries. Vol. 3, No. 2-1, 2015, pp. 78-82. doi: 10.11648/j.jeee.s.2015030201.27
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