Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs
Journal of Electrical and Electronic Engineering
Volume 3, Issue 2-1, March 2015, Pages: 35-38
Received: Dec. 5, 2014; Accepted: Dec. 9, 2014; Published: Dec. 27, 2014
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Authors
Sakine Shirvaliloo, Department of Medical Physics, Iran University of Medical Sciences, Tehran, Iran; Young Researchers Club, Mahabad, Iran
Hale Kangarloo, Faculty of Science, IAV, Branch Urmia, Urmia, Iran
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Abstract
Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. In this paper, emphasis is on reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques.
Keywords
Atomic Layer Deposition, Precursor, Gate Electrode, Dynamic and Ferroelectric Memories, Capacitors
To cite this article
Sakine Shirvaliloo, Hale Kangarloo, Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs, Journal of Electrical and Electronic Engineering. Special Issue: Research and Practices in Electrical and Electronic Engineering in Developing Countries. Vol. 3, No. 2-1, 2015, pp. 35-38. doi: 10.11648/j.jeee.s.2015030201.18
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