Design of Analog Field Programmable CMOS Current Conveyor
Science Journal of Circuits, Systems and Signal Processing
Volume 1, Issue 1, December 2012, Pages: 9-21
Received: Dec. 21, 2012; Published: Dec. 30, 2012
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G. Kapur, Dayalbagh Educational Institute, Dayalbagh, Agra, India
S. Mittal, Indian Institute of Kanpur, Kanpur, India
C. M. Markan, Dayalbagh Educational Institute, Dayalbagh, Agra, India
V. P. Pyara, Dayalbagh Educational Institute, Dayalbagh, Agra, India
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The paper propose a modified high frequency current controlled current conveyor CMOS circuit CCCII where current gain, current controlling intrinsic impedance and circuit offsets are programmable independently to desired values within a specific field range after fabrication with the help of field programmable floating gate transistors FGMOS. The programmable charge at floating-gate of FGMOS using external voltages results in its threshold voltage variation, which in turn program the design (CCCII) specifications. The circuit occupies low power, about 1.509mW total power dissipation and shows higher temperature stability (0.0287uA/°C variation in output current with temperature change). With specific sizing and biasing condition, the current gain can be programmed from 0.2 to 2.1, intrinsic impedance from 15K to 51K, while offset current can be compensated, independently using each FGMOSFETs, respectively, with 13-bit precision. However the final programmable CCCII circuit with FGMOSFETs occupies 65µm × 54µm chip area. The circuit finds application in systems where field-programmability of the design using smaller sized hardware is required like universal filter, current control high frequency oscillator, etc as compared to the circuits using current control conveyor based FPAAs.
Current Controlled Conveyor, Floating-Gates, Field Programmable Specifications, Field Programmable Threshold Voltage
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G. Kapur, S. Mittal, C. M. Markan, V. P. Pyara, Design of Analog Field Programmable CMOS Current Conveyor, Science Journal of Circuits, Systems and Signal Processing. Vol. 1, No. 1, 2012, pp. 9-21. doi: 10.11648/j.cssp.20120101.12
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