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Comparative Study of Heterostructure Barrier Diodes in the GaAs/AlGaAs System
International Journal of Materials Science and Applications
Volume 7, Issue 4, July 2018, Pages: 161-166
Received: Sep. 16, 2018; Published: Sep. 18, 2018
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Mise Akura, Department of Electronic Engineering, University of Aberdeen, Aberdeen, UK
Geoffrey Dunn, Department of Physics, University of Aberdeen, Aberdeen, UK
Mohammed Missous, Department of Electrical and Electronic Engineering, University of Manchester, Manchester, UK
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A comparative study of the electron transport property and operation of the Potential Well Barrier (PWB) diode and Planar-doped Potential-well Barrier (PPB) diode has been carried out in this study. Both diodes are heterostructures in GaAs/AlGaAs system with similarities in layer design though, with a sheet charge inserted close to the well of the PPB diode. A drift-diffusion and Monte Carlo simulation models were used throughout the study to examine the behavior of electrons in terms of the electric field distribution across the diodes, electron velocities, electron energy and densities. Results of simulation has shown how the electric field varies in the left and right intrinsic regions of the device and the effect of the field on velocity. The I-V characteristics of the experimental and simulation results have shown a good agreement in the two diodes though, with little adjustment of about ± 2.5% to design parameters in order to obtain a good fit with experimental results. The I-V characteristics of the diodes reveal that the PPB diode turns on at a higher voltage than the PWB diode though, with a better asymmetry in the reverse bias operation. This is because the sheet charge in the PPB diode produces additional charge and together with the charge in the well, presents a higher potential barrier than the PWB diode whose barrier is determined by the charge in the well only. The diodes demonstrate promising RF behavior with voltage responsivity of 10900V/W and 6400V/W at 10GH for the PPB and PWB diodes respectively.
Monte Carlo, Drift-Diffusion, Potential Well, Curvature Coefficient, Turn-on Voltage
To cite this article
Mise Akura, Geoffrey Dunn, Mohammed Missous, Comparative Study of Heterostructure Barrier Diodes in the GaAs/AlGaAs System, International Journal of Materials Science and Applications. Vol. 7, No. 4, 2018, pp. 161-166. doi: 10.11648/j.ijmsa.20180704.17
M. Akura, G. Dunn, J. Sexton and M. Missous, “Potential well barrier diodes for submillimeter wave and high frequency applications,” IEEE Electron Device Lett. vol. 38, no. 4 pp. 438-440, 2017. doi:10.1109/LED.2017.2673662.J.
M. Akura, G. Dunn and M. Missous, “A hybrid planar-doped potential-well barrier diode for detector applications,” IEEE Trans. On Electron Dev., 64 2017 doi:10.1109/TED.2017.2733724.
M. Akura, G. Dunn, J. Sexton and M. Missous, “GaAs/AlGaAs potential well barrier diodes: Novel diode for detector and mixer applications,” Phys. Status. Solidi. A, vol. 214, pp. 17002901-7, 2017. doi:10.1002/pssa.201700290.
M. Akura and G. Dunn, “Investigating the effect of temperature on barrier height of PWB diodes,” Electron Lett. vol. 54, no. 1, pp. 42-43, Jan 2017. doi:10.1049/el.2017.3353.
Z. Pei, A. Verma, J. Verma, H. Xing, P. Fay, D. Jena, "GaN heterostructure barrier diodes exploiting polarization induced δ-doping," IEEE Electron Device Lett. vol. 35, No. 6, pp. 615-617, Jun. 2014. doi: 10.1109/LED.2014.2316140.
Y. Fu, M. Mamor, M. Willander, S. Bengtsson, and L. Dillner, “n-Si/SiO2/Si heterostructure barrier varactor diode design,” Appl. Phys. Lett. 77, 103 (2000); doi: 10.1063/1.126891.
H. Tanimoto, N. Yasuda, K. Taniguchi and C. Hamaguchi, “Monte Carlo study of hot electron transport in quantum wells,” Jap. Journ. of Appl. Phys. vol. 27, no. 4, pp. 563-571, 1988.
N. R. Couch and M. J. Kearney, “Hot-electron properties of GaAs planar-doped barrier diodes,” J. Appl. Phys. vol. 66, no. 10, pp. 5083-5085, 1989. doi:10.1063/1.343734.
R. K. Cook, “Computer simulation of carrier transport in planar doped barrier diodes,” Appl. Phys. Lett. vol. 42, no. 5, pp. 439-441, 1983. doi:10.1063/1.93963.
C. Li, A. Khalid, N. Piligrim, G. Dunn and D. Cumming, “Novel planar Gunn diode operating in fundamental mode up to 158 GHz,” J. of Phys: Conf. Series vol. 193, no. 1, pp 0120291-4 2009. doi: 10.1088/1742-6596/193/1/012029.
T. Teoh, G. Dunn, N. Priestley, and M. Carr, “Monte Carlo modelling of multiple-transit-region Gunn diodes,” Semicond. Sci. Technol. vol. 17, 1090-1095, Sept. 2002.
N. Pilgrim, R. Macpherson, A. Khalid, G. Dunn and D. Cumming, “Multiple and broad frequency response Gunn diodes,” Semicond. Sci. Technol. vol. 24, no. 1 pp. 105010, 2009. doi: 10.1088/0268-1242/24/10/05010.
M. J. Kearney, A. Condie, and I. Dale, “GaAs planar doped barrier diodes for millimeter-wave detector application,” Electron Lett., vol. 27, no. 9, pp. 721–722, Feb. 1991.
R. J. Malik and S. Dixon, “A subharmonic mixer using a planar doped barrier diode with symmetric conductance,” IEEE Electron Device Lett., vol. 3, no. 7, pp. 205–207, Jul. 1982.
“The zero bias Schottky barrier detector diode,” Agilent Technol., Santa Clara, CA, USA, Appl. Note 969.
S. Y. Park, R. Yu, S. Y. Chung, P. R. Berger, P. E. Thompson and P. Fay, “Delta-doped Si/SiGe zero-bias backward diodes for micro-wave Detection”, IEEE 65thAnnual Dev. Res. Conf. pp. 153 - 154, Jun. 2007. doi: 10.1109/DRC.2007.4373694.
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