Pyrolized Growth of (Al, N) Dual Doped CdO Thin Films and Study of Structural, Surface Morphology and Opto-Electrical Properties
International Journal of Materials Science and Applications
Volume 2, Issue 4, July 2013, Pages: 124-127
Received: Jun. 19, 2013;
Published: Jul. 20, 2013
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A. F. M. Faizullah, Department of Physics, University of Rajshahi, Bangladesh
M. K. R. Khan, Department of Physics, University of Rajshahi, Bangladesh
M. Mozibur Rahman, Department of Physics, University of Rajshahi, Bangladesh
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Thin films of undoped and (Al, N) dual doped CdO were prepared on glass substrate at substrate temperature 350 ºC by spray pyrolysis method. The films are characterized by XRD, AFM, Optical and electrical properties. The films are highly poly crystalline and found to be cubic. AFM images show the surface properties of the film. It increases with increasing concentration of Al & N in the CdO samples. Optical transmittance is made at room temperature within the wavelength range 400 nm to 1100 nm. Direct band gap of undoped CdO has been measured and found to be 2.58 eV and it decreases with (Al, N) dual doping in CdO thin film upto 2.52 eV. The resistivity of undoped CdO shows the metallic behavior upto 370 K and then followed by semiconducting behavior. (Al, N) dual doping shows the carrier compensation during temperature range (355 - 375) K.
Spray Pyrolysis, Dual Doped, CdO, Grain Size
To cite this article
A. F. M. Faizullah,
M. K. R. Khan,
M. Mozibur Rahman,
Pyrolized Growth of (Al, N) Dual Doped CdO Thin Films and Study of Structural, Surface Morphology and Opto-Electrical Properties, International Journal of Materials Science and Applications.
Vol. 2, No. 4,
2013, pp. 124-127.
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