Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon
Engineering and Applied Sciences
Volume 2, Issue 5, October 2017, Pages: 77-88
Received: Jun. 5, 2017; Accepted: Jun. 21, 2017; Published: Nov. 28, 2017
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Authors
Vitalyi Igorevich Talanin, Department of Computer Science & Software Engineering, Institute of Economics & Information Technologies, Zaporozhye, Ukraine
Igor Evgenievich Talanin, Department of Computer Science & Software Engineering, Institute of Economics & Information Technologies, Zaporozhye, Ukraine
Vladislav Igorevich Lashko, Department of Computer Science & Software Engineering, Institute of Economics & Information Technologies, Zaporozhye, Ukraine
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Abstract
An algorithm for calculating the defect structure of semiconductor silicon crystals was proposed. The proposed approach makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal. Calculations are performed by using and analyzing the thermal conditions of crystal growth in the temperature range from 1683 K to 300 K. The algorithm flowchart is given.
Keywords
Semiconductor Silicon, Precipitates, Molecular Potential, Grown-in Microdefects, Microvoids, Dislocation Loops, Algorithm
To cite this article
Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko, Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon, Engineering and Applied Sciences. Vol. 2, No. 5, 2017, pp. 77-88. doi: 10.11648/j.eas.20170205.11
Copyright
Copyright © 2017 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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