Personal Information
Wojciech Jadwisienczak

School of Electrical Engineering & Computer Science, Ohio University, Athens, Ohio, USA

Wojciech Jadwisienczak
Educations
From 08/1996 to 08/2001, Doctorate , U.S.A.
From 09/1990 to 09/1995, Master of Science , Poland
Work Experiences
From 09/2011 to Present, Associate Professor , Ohio University
From 07/2005 to 08/2011, Assistant Professor , Ohio University
From 09/2001 to 07/2005, Visiting Assistant Professor , Ohio University
From 09/1996 to 05/2001, Visiting Scholar & Research Assistant , Ohio University
Projects
From 01/2013 to 12/2014, NUE: nanO stUdio-An Immersive Ambience for Nano Educational Experiences , National Science Foundation sponsored project
From 01/2011 to 03/2016, DMR/CAREER: Engineering of III-Nitride Quantum Heterostructures Doped with Lanthanides for Multifunctional Devices , National Science Foundation sponsored project
From 07/2009 to 06/2010, DURIP: Instrumentation for Magneto-Optical Studies of Novel Magnetic Materials and Diluted Magnetic Semiconductor Systems , Army research Office sponsored project
From 07/2010 to 10/2012, OU 1804 Fund: Enhancement of MOCVD Material Growth System for Advancement of Campus-Wide Research and Education in Nanomaterials and Nanodevices , Ohio University sponsored project
From 07/2007 to 10/2009, OU 1804 Fund: Solid state laser pumped tunable dye laser system with frequency doubling module for nanophotonics research and graduate studies , Ohio University sponsored project
From 08/2011 to 08/2015, MRI: Acquisition of Transmission Electron Microscope for Advanced Materials Relating to Energy Storage, Alternative Energy, Remediation, and Superconductors , National Science Foundation sponsored project
Speciality
Novel lanthanides doped solid state materials for solid state lighting, energy conversion, photovoltaics and energy harvesting through up- and down-conversion
Fundamental optical, magneto-optical and electrical properties of wide band gap III-N and II-VI semiconductors
Semiconductor devices, processing and properties of layered alloyed semiconductors relevant to optoelectronics, spintronics and sensors
Electroluminescence devices and phosphors with concentration on luminescence of lanthanide
Physics and spectroscopy of low dimensional structures and photonic crystals doped with lanthanides
Ceramic and glassy materials engineering for laser applications
Book
M. Maqbool, W. M. Jadwisienczak, M. E. Kordesch, chapter title: Cathodoluminescence from Amorphous and Nanocrystalline Nitride Thin Films Doped with Rare Earth and Transition Metals, N. Yamamoto, ed., title: Cathodoluminescence, ISBN: 978-953-51-0362-2 (March 2012).
Journal Articles
J. Beltran-Huarac, J. Palomino, O. Resto, J. Wang, W. M. Jadwisienczak, B. R. Weiner, G. Morell, Highly-Crystalline γ-MnS Nanosaws, RSC Adv., 4 38103 (2014).
H. Tanaka, W. M. Jadwisienczak, H. Saito, V. Zayets, S. Yuasa, and K. Ando, Localized sp-d Exchange Interaction in a Ferromagnetic Ga1-xMnxAs Observed by Magnetic Circular Dichroism Spectroscopy, J. Phys. D: Appl. Phys., 47 355001 (2014).
A. Podhorodecki, L.W. Golacki, G. Zatryb, J. Misiewicz, J. Wang, W. Jadwisienczak, K. Fedus, J. Wojcik, P. R. J. Wilson, P. Mascher, Excitation mechanism and thermal emission quenching of Tb ions in Silicon Rich Silicon Oxide thin films grown by PECVD – do we need silicon nanoclusters?, J. App. Phys., 115, 143510 (2014).
T. Kallel, M. Dammak, W. M Jadwisienczak, R. Palai, Optical studies and crystal field calculation of GaN nanorods doped with Yb3+ ions, J. Alloys & Comp., 609, 284-289 (2014).
J. Beltran-Huarac, O. Resto, J. Carpena-Nuñez, W. M. Jadwisienczak, B. R. Weiner, G. Morell, Single-crystal γ-MnS nanowires conformally-coated with carbon, ACS Applied Materials & Interfaces, 6, 1180-1186 (2014).
M. Sajjad, M. J-F Guinel, W. M. Jadwisienczak, D. Varshney, G. Morell, and P. X. Feng, Nanoscale Structure Study of Boron Nitride Nanosheets and Development of Deep-UV Photo-Detector, Nanoscale, 6, 4577-4582 ( 2014).
T. Kallel, M. Dammak, H. Khmekhem, J. Wang, W. M. Jadwisienczak, Raman Characterization and Stress Analysis of AlN:Er3+ Epilayers Grown on Sapphire and Silicon Substrates, Mat. Scien. Eng. B, 187, 46-52 (2014).
J. Beltran-Huarac, J. Wang, H. Tanaka, W. M. Jadwisienczak, B. Weiner, G. Morell, Stability of the Mn Photoluminescence in Bi-functional ZnS:0.05Mn Nano-particles, J. Appl. Phys., 114, 053106 (2013).
H. Tanaka, W. M. Jadwisienczak, S. Kaya, G. Chen, C. Wan, M. Kordesch, Ferromagnetism of cluster and thickness dependence in nickel in situ doped amorphous AlN thin films, J. Electronic Materials, 42, 844 (2013).
T. Kallel, T. Koubaa, M. Dammak, J. Wang, W.M. Jadwisienczak, Optical Characterization and Crystal Field Calculation of Er3+ in AlN Epilayers, J. Lumin., 134, 893 (2013).
J. Wu, R. Palai, W. M. Jadwisienczak, M. S. Shur, Bandgap Engineering in MBE Grown Al(1-x)GaxN Epitaxial Columnar Nanostructures, J. Phys. D: Appl. Phys. 45, 015104 (2012).
W. M. Jadwisienczak, R. Palai, J. Wang, H. Tanaka , J. Wu, J. Rivera, H. Huhtinen, A. Anders Optical Properties of Ferromagnetic Ytterbium Doped III-Nitride Epilayers, phys. stat. sol. (c) Vol.8, p.2185-2187 (2011).
W. M. Jadwisienczak, J. Wang, H. Tanaka, J. Wu, A. Rivera, R. Palai, H. Huhttinen, A. Anders, Optical and Magnetic Properties of GaN Epilayers Implanted with Ytterbium, J. of Rare Earth, Vol. 28, p.931-935 (2010).
W. M. Jadwisienczak, K. Wisniewski, M. Spencer, T. Thomas, D. Ingram, Optical Properties, Luminescence Quenching Mechanism and Radiation Hardness of Eu-doped GaN Red Powder Phosphor, Radiat. Meas., Vol.45, pp.500-504 (2010).
T. Koubaa, M. Dammak, M. Kammoun, W. M. Jadwisienczak, H. J. Lozykowski, Crystal Field and Zeeman parameters of Substitutional Yb3+ Ion in GaN, J. Alloys and Compounds, Vol.496 pp.56–60 (2010).
A. Khan, S. N. Khan, and W. M. Jadwisienczak, One Step Growth of ZnO Nano-Tetrapods by Simple Thermal Evaporation Process: Structural and Optical Properties, Science of Advanced Materials Vol. 2, 572–577 (2010).
T. Koubaa, M. Dammak, M. Kamoun, W. M. Jadwisienczak, H. J. Lozykowski, and A. Anders, Spectra and energy levels of Yb3+ in AlN, J. Appl. Phys., Vol.106 pp.013106-6 (2009).
K. Wisniewski, W. M. Jadwisienczak, T. Thomas and M. Spencer, High Pressure Luminescence Studies of Europium Doped GaN, J. Rare Earth, Vol. 27, pp.667-670 (2009).
A. Khan, S. N. Khan, W. M. Jadwisienczak, and M. E. Kordesch, Raman spectroscopic studies of monoclinic Gallium Oxide (β-Ga2O3) Nanostructures: A comparison between nanowires vs. nanobelts, Science of Advanced Materials, Vol.11, pp.122-125 (2008).
A. Khan, W. M. Jadwisienczak, H. J. Lozykowski and M. E. Kordesch, Catalyst-Free Synthesis and Luminescence of Aligned ZnO Nanorods, Physica E, Vol. 39, 258-261 (2007).
H. J. Lozykowski, W. M. Jadwisienczak, Thermal Quenching of Luminescence and Isovalent Traps Model for Rare Earth Ions Doped AlN, phys. stat. sol. (b) Vol.244, 2109-2126 (2007).
A. Khan, W. M. Jadwisienczak, M. E. Kordesch, One Step Preparation of Ultra-wide β-Ga2O3 Nanosheets and Nanobelts and their Photoluminescence study, Physica E Vol.35, 207-211 (2006).
A. Khan, W. M. Jadwisienczak, and M. E. Kordesch, From Zn Microspheres to Hollow ZnO Microspheres: A simple Route to the Growth of Large Scale Metallic Zn Micorspheres and Hollow ZnO Microspheres, Physica E, Vol.33, 331 (2006).
H. J. Lozykowski, W. M. Jadwisienczak, A. Bensaoula, and O. Monteiro, Luminescence and Excitation Mechanism of Pr, Eu, Tb and Tm Ions Implanted into AlN, Microelectronics Journal Vol. 36, 453 (2005).
D. C. Ingram, H. J. Lozykowski, and W. M. Jadwisienczak, RBS Ion Channeling Study of Low Concentrations of Ion Implanted Samarium in GaN, Methods in Physics Research B Vol. 219-220, 699 (2004).
W.M. Jadwisienczak, H. J. Lozykowski, Optical Properties of Yb Ion in GaN Epilayer, Optical Materials, Vol. 23, 175 (2003).
J. B. Gruber, B. Zandi, H. J. Lozykowski, and W. M. Jadwisienczak, Spectra and energy levels of Tb3+ (4f8) in GaN , J. Appl. Phys., Vol. 92, 5127 (2002).
W. M. Jadwisienczak, H. J. Lozykowski, A. Xu and B. Patel, Visible Emission from ZnO Doped with Rare Earth Ions, J. Electron. Materials Vol. 31, 776 (2002).
J. B. Gruber, B. Zandi, H. J. Lozykowski, and W. M. Jadwisienczak, Spectroscopic Properties of Sm3+ (4f5) in GaN, J. Appl. Phys. Vol. 91, 2929 (2002).
J. B. Gruber, B. Zandi, H. J. Lozykowski, W. M. Jadwisienczak and I. G. Brown, Crystal-field splitting of Pr3+ (4f2) energy levels in GaN, J. Appl. Phys. Vol. 89, 7973 (2001).
W. M. Jadwisienczak, H. J. Lozykowski, I. Berishev, A. Bensaoula and I. G. Brown, Visible Emission from AlN Doped with Eu and Tb Ions, J. Appl. Phys. Vol. 89, 4384 (2001).
H. J. Lozykowski, W. Jadwisienczak and I. G. Brown, Cathodoluminescence Study of GaN doped with Tb, Material Science & Engineering B Vol. 81/1-3, 140 (2001).
H. J. Lozykowski, W. M. Jadwisienczak, J. Han and I. G. Brown, Luminescence Properties of GaN and Al0.14Ga0.86N/GaN Superlattice Doped with Europium, Appl. Phys. Lett. Vol. 77, 767 (2000).
H.J. Lozykowski, W. M. Jadwisienczak and I. G. Brown, Photoluminescence and Cathodoluminescence of GaN Doped with Pr, J. Appl. Phys. Vol. 88, 210 (2000).
W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch and I. G. Brown, Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering, Appl. Phys. Lett. Vol. 76, 3376 (2000).
H. J. Lozykowski, W. M. Jadwisienczak and I. G. Brown, Photoluminescence and Cathodoluminescence of GaN Doped with Tb, Appl. Phys. Lett. Vol. 76, 861 (2000).
H. J. Lozykowski, W. M. Jadwisienczak and I. G. Brown, Photoluminescence and Cathodoluminescence of GaN doped with Pr, MRS Internet J. Nitride Semicond. Res. 5S1, W11.64 (2000).
K. Gurumurugan, H. Chen, G. R. Harp, W. M. Jadwisienczak and H. J. Lozykowski, Visible Cathodoluminescence of Er Doped Amorphous AlN Thin Films by Sputtering, Appl. Phys. Lett. Vol. 74, 3008 (1999).
H. J. Lozykowski, W. M. Jadwisienczak and I. Brown Cathodoluminescence of GaN doped with Sm and Ho, Solid State Commun. Vol. 110, 253 (1999).
H. J. Lozykowski, W. M. Jadwisienczak and I. Brown Visible Cathodoluminescence of GaN doped with Dy, Er and Tm, Appl. Phys. Lett. Vol. 74, 1129 (1999).
Conference Papers
W. M. Jadwisienczak, H. Tanaka, G. Chen, M. Kordesch, A. Khan, Morphology and Magneto-optical Properties of Amorphous AlN Films Doped with Nickel, Mater. Res. Soc. Symp. Proc. Vol. 1290 (2011) DOI: 10.1557/opl.2011.16.
W. M. Jadwisienczak, H. Tanaka, M. Kordesch, A. Khan, S. Kaya, R. V. Vuppuluri, Studies of Ni and Co doped Amorphous AlN for Magneto-Optical Applications, Mater. Res. Soc. Symp. Proc. Vol. 1202, pp.1202-I05-06 (2010).
M. A. Ebdah, W. M. Jadwisienczak, J. Wang, et.al., X-ray Diffraction Study of InGaN/GaN Superlattice Implanted With Eu3+Ions, Mater. Res. Soc. Symp. Proc. Vol. 1202, 1202-I05-20 (2010).
A. Khan, S.N. Khan, W.M. Jadwisienczak, M.E. Kordesch, Growth and optical properties for non-catalytically grown ZnO micro-tubules by simple thermal evaporation, Materials Letters Vol.63 pp.2019–2021 (2009).
M. A. Ebdah, W. M. Jadwisienczak, M. E. Kordesch, S. Ramadan, H. Morkoc, and A. Anders, Studies of III-Nitride Superlattice Structures Implanted with Lanthanide Ions, Mater. Res. Soc. Symp. Proc., vol.1111, 1111-D04-12, (2009).
W M. Jadwisienczak, S. Ramadan, T. Thomas, M. G. Spencer, N. Garces, E. Glaser and K. Wisniewski, Luminescence and Excitation Mechanisms of Eu-doped GaN Phosphors, MRS. Symp. Proc., Vol.1111, p.1111-D02-07 (2009).
W. M. Jadwisienczak, A. Vemuru, S. Khan, A. Khan, and M. E. Kordesch, Visible Luminescence of Rare Earth Ions Doped Amorphous Zinc Oxide Thin Films Grown by Sputtering Technique, Mater. Res. Symp. Proc. Vol.1035, 1035-L11-19 (2008).
A. Khan, W. Jadwisienczak, S. N. Khan and M. E. Kordesch, ZnO Nanofibers Doped with Ga, In and Er Fabricated by Electrospinning Technique, Paper #270500, Symposium K: Zinc Oxide and Related Materials, Mater. Res. Soc. Symp. Proc. Vol. 957, 0957-K10-49 (2007).
A. Khan, W.M. Jadwisienczak, M. E. Kordesch and H. J. Lozykowski, Fabrication and Luminescence Properties of Monoclinic Ga2O3 Nanostructures, Symposium E: Nanofunctional Materials, nanostructures, and Novel Devices for Biological and Chemical Detection, Mater. Res. Soc. Symp. Proc. Vol. 951, 0951-E09-42 (2007).
A. Khan, W. M. Jadwisienczak and M. E. Kordesch, Synthesis of Novel ZnO Nanostructures: Spheres, Sheets, Needles, Tipped Nanorods and Wires, Polyhedral Cages, Shells and Microphone Like Structures, O6.18, Mater. Res. Soc. Symp. Proc. Vol. 900E, 0900-O06-18-1 (2006).
W. M. Jadwisienczak, H. J. Lozykowski, I. Berishev, A. Bensaoula and I. G. Brown, Visible Emission from AlN Doped with Eu, Tb, and Er Ions, Proceeding of the 2000 IEEE International Symposium on Compound Semiconductors, Monterey, CA, p.489 (2000).
H.J. Lozykowski, W. M. Jadwisienczak and I. G. Brown, Luminescence Properties of GaN:Tb, Al0.14Ga0.86N/GaN Superlattice and AlN:Tb and Eu, Bull. Am. Phys. Soc. 46N1, R40-41, 826 (2001).
H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak and H. J. Lozykowski, Visible and Infrared Emission from GaN:Er Thin Films Grown by Sputtering, MRS Internet J. Nitride Semicond. Res. 5S1, W3.16 (2000).
Z. Hassan, M. E. Kordesch, W. M. Jadwisienczak and H. J. Lozykowski, Low Temperature ECR Plasma assisted MOCVD Microcrystalline and Amorphous GaN Deposition and Determination for Electronic Devices, Mat. Res. Soc. Sympos. Proc. (1998).
W. M. Jadwisienczak and H. J. Lozykowski, Luminescence Properties of As, P, and Bi as Isoelectronic Traps in GaN, Mat. Res. Soc. Sympos. Proc. Vol. 482, 1033 (1997).
W. M. Jadwisienczak and H. J. Lozykowski, Photoluminescence from GaN Implanted with Phosphorus and Bismuth, Proceeding of the IEEE 24th Inter. Sympos., San Diego, 271, (1997).
Cz. Koepke, K. Wisniewski, W. M. Jadwisienczak, and M. Grinberg, Spectroscopic Evaluation of Titanium Doped Glass, Proceeding of SPIE Vol. 3176, 21-24 (1997).
Cz. Koepke, K. Wisniewski, W. M. Jadwisienczak, M. Grinberg, D. L. Russell, and K. Holliday, Structure of the 2Eg - 4A2 Emission in Cr3+: Gahnite Glass Ceramics, Proceeding of SPIE Vol. 3176, 42-46 (1997).
Honors and Awards
Recipient of The M. E. & A. White Research Award, RCENT, Ohio University, June 2011,
The 2001 G.E. and G.V. Smith Memorial Engineering Award for 2000/2001 academic year, RCENT, Ohio University, April, 2001
The Young Scientist Award for the best paper presented at Symposium K: Rare Earth Doped Semiconductors, E MRS IUMRS ICEM 2000, Spring Meeting, Strasbourg, France, 2000.
ADDRESS
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10th and 11th Floors,
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U.S.A.
Tel: (001)347-983-5186