Personal Information
Levan Chkhartishvili

Department of Engineering Physics, Georgian Technical University, Tbilisi, Georgia

Levan Chkhartishvili
Educations
From 11/1982 to 11/1986, Doctorate , Georgia
From 09/1974 to 06/1980, Baccalaureate / Magistracy , Georgia
Work Experiences
From 09/1992 to present, Assistant / Senior Researcher / Associate Professor / Professor , Georgian Technical University, Georgia
From 10/2006 to present, Senior Engineer / Researcher / Senior Researcher , Ferdinand Tavadze Institute of Metallurgy and Materials Science, Georgia
From 10/2008 to 06/2010, Associate Professor , Ilia State University, Georgia
From 05/2008 to 05/2009, Researcher , Liquid Light Inc. Labs, Georgia
From 09/2005 to 06/2009, Associate Professor / Professor , Ilia Chavchavadze Tbilisi Educational University, Georgia
From 01/1995 to 01/1996, Expert , State Department of Hydrometeorology of Georgia, Georgia
From 09/1993 to 06/1994, Lecturer , Ivane Javakhishvili Tbilisi State University, Georgia
From 09/1980 to 06/1992, Engineer / Junior Researcher / Researcher , Scientific-Industrial Association 'Mion', Georgia
Projects
From 10/2013 to 03/2015, 3rd International Conference “Nanotechnologies” (Nano – 2014) , Organizing the international scientific conference on nanotechnology.
From 05/2011 to 05/2012, Ascertainment of physical nature for nanoparticles’ properties dependence on their sizes , Studying the nanoparticles physical properties in dependence of thir sizes.
From 03/2009 to 03/2010, Geometry of the boron nitride nanostructures , Constructing the geometric models for BN nanosystems.
Speciality
Theoretical Physics
Solid State Physics
Book
CRC Concise Encyclopedia of Nanotechnology. 2015, Boca Raton, CRC Press – Taylor & Francis Publ. Group, Ch.7 All-boron nanostructures pp.53-69 & Ch.8 Boron nitride nanostructures pp.70-99, Book Chapters' Author: L. Chkhartishvili.
Nanomaterials for Environmental Protection, 2014, Hoboken, John Wiley & Sons Inc., Ch.26 Neutron-fluence nanosensors based on boron-containing materials pp.445-449 & Ch.27 Hydrogen nanoreservoirs made of boron nitride pp.453-467, Book Chapters' Author: L. Chkhartishvili.
Radiation Synthesis of Materials and Compounds, 2013, Boca Raton, CRC Press – Taylor & Francis Group, Ch.3 Interaction between neutron-radiation and boron-containing materials pp.43-80, Book Chapter'a Author: L. Chkhartishvili.
Iterative and Trnascendental Solutions of Algebraic Equations, 2012, Saarbrüken, Palmarium Acad. Publ., 88pp., Monograph's Author: L. Chkhartishvili.
Boron Based Solids, 2011, Trivandrum, Research Signpost, Editorial: Why boron based solids? pp.V-XII & Ch.6 Boron nitride nanosystems pp.93-145, Book Editorial's and Chapter's Author: L. Chkhartishvili.
New Developments in Materials Science, 2011, New York, Nova Sci. Publ., Ch.8 Nanotubular boron: Ground-state estimates pp.67-80, Book Chapter's Author: L. Chkhartishvili.
Boron. Compounds, Production and Application, 2011, New York, Nova Sci. Publ., Ch.6 Micro- and nano-structured boron pp.221-294. Book Chapter's Author:L. Chkhartishvili.
Quasi-Classical Theory of Substance Ground State, 2004, Tbilisi, Tech. Univ. Press, 258pp., Monograph's Author: L. Chkhartishvili
Journal Articles
Nanoparticles near-surface electric field. Nanoscale Res. Lett., 2016, 11, 1, 48 (1-4). Author: L. Chkhartishvili.
Tribological applications for boron. Vac. Technol. & Coat., 2015, 16, 10, 36-41. Authors: R. Becker, L. Chkhartishvili, P. Martin.
Influence of IR illumination on conduction electron scattering in crystals irradiated with 25-MeV protons. Ukr. J. Phys., 2015, 60, 6, 521-527. Authors:T. A. Pagava, L. S. Chkhartishvili, N. I. Maisuradze, M. G. Beridze, D. Z. Khocholava.
Boron, the new graphene? Vac. Technol. & Coat., 2015, 16, 4, 38-44. Authors: R. Becker, L. Chkhartishvili, P. Martin.
“Metallic” boron nitride. Eur. Chem. Bull., 2015, 4, 1-3, 8-23. Authors: R. Becker, L. Chkhartishvili, R. Avci, I. Murusidze, O. Tsagareishvili, N. Maisuradze.
Single-parameter model for multi-walled geometry of nanotubular boron. Solid State Sci., 2015, 2015, 47, 61-67. Authors:L. Chkhartishvili, N. Mamisashvili, N. Maisuradze.
Isotopic expansion of boron. J. Metall. Eng., 2014, 3, 3, 97-103. Authors: L. Chkhartishvili, O. Tsagareishvili, D. Gabunia.
Structure and properties of β-rhombohedral boron powders produced by mechanical grinding. Powd. Metall. & Met. Ceram., 2014, 53, 5-6, 251-261. Authors:D. L. Gabunia, O. A. Tsagareishvili, L. S. Chkhartishvili, Z. M. Mirijanashvili.
Frequencies of vibrations localized on interstitial metal impurities in beta-rhombohedral boron based materials. Am. J. Mater. Sci., 2014, 4, 2, 103-110. Authors: L. Chkhartishvili, I. Murusidze.
Powdered hexagonal boron nitride reducing nano-scale wear. In: Physics, Chemistry and Application of Nanostructures, 2013, Singapore, World Scientific, 438-440. Authors: L. Chkhartishvili, T. Matcharashvili, R. Esiava, O. Tsagareishvili, D. Gabunia, B. Margiev, A. Gachechiladze.
Hall-effect study of disordered regions in proton-irradiated n-Si crystals. Ukr. J. Phys., 2013, 58, 8, 773-779. Authors: Т. А. Pagava, М. G. Beridze, N. I. Maisuradze, L. S. Chkhartishvili, I. G. Kalandadze.
Quasi-chemical reactions in irradiated silicon. Eur. Chem. Bull., 2013, 2, 10, 785-793. Authors: T. Pagava, L. Chkhartishvili.
Nano-sized inclusions influence on semiconducting material: Proton-irradiated silicon. Am. J. Mater. Sci., 2013, 3, 2, 29-35. Authors:T. Pagava, L. Chkhartishvili.
On heat-flow direction inertia effect. Fund. J. Thermal Sci. Eng., 2012, 2, 2, 53-61. Authors:J. Khantadze, D. Gabunia, L. Chkhartishvili.
Solution of an algebraic equation using an irrational iteration function. Math. Notes, 2012, 92, 5, 714-719. Author: L. S. Chkhartishvili.
Metal impurities in crystallographic voids of beta-rhombohedral boron lattice: Binding energies and electron levels. Solid State Sci., 2012, 14, 11-12, 1673-1682. Authors: L. Chkhartishvili, I. Murusidze, M. Darchiashvili, O. Tsagareishvili, D. Gabunia.
Relative stability of BN nanotubes. Solid State Sci., 2012, 14, 11-12, 1664-1668. Authors: L. Chkhartishvili, I. Murusidze.
Crystals specific heat beyond phonons-conception. Int. J. Pure Appl. Sci. Technol., 2012, 10, 2, 31-37. Authors: A. Gerasimov, L. Chkhartishvili, D. Buachidze.
Study of recombination and electric properties of p-Si crystals irradiated with electrons. Ukr. J. Phys., 2012, 57, 5, 525-530. Authors:T. A. Pagava, D. Z. Khocholava, N. I. Maisuradze, L. S. Chkhartishvili.
On stability of small boron nitride nanotubes. In: Physics, Chemistry and Applications of Nanostructures, 2011, Singapore, World Scientific, 126-129. Authors: L. Chkhartishvili, T. Berberashvili, I. Murusidze.
Geometrical models for bare boron nanotubes. In: Physics, Chemistry and Applications of Nanostructures, 2011, Singapore, World Scientific, 118-121. Author:L. Chkhartishvili.
Geometrical model based refinements in nanotube chiral indices. World J. Nano Sci. Eng., 2011, 1, 2, 45-50. Authors: L. Chkhartishvili, T. Berberashvili.
Molar binding energy of zigzag and armchair single-walled boron nitride nanotubes. Mater. Sci. Appl., 2010, 1, 4, 223-246. Authors: L. Chkhartishvili, I. Murusidze.
On permittivity of a stacking nano-faulty film. Epitoanyag – J. Silicate Based & Composite Mater., 2010, 63, 3, 75-82. Author: L. S. Chkhartishvili.
Intra-atomic electric field radial potentials in step-like presentation. J. Electro Mag. Anal. Appl., 2010, 2, 4, 205-243. Authors: L. Chkhartishvili, T. Berberashvili.
Isotopic effects of boron (Review). Trends Inorg. Chem., 2009, 11, 105-167. Author: L. Chkhartishvili.
Impurities’ influence on complex defects annealing: Divacancies in silicon. Radiat. Eff. Defects Solids, 2009, 164, 10, 639-646. Authors: T. Pagava, L. Chkhartishvili.
Thermal switching effect in b-rhombohedral boron. J. Phys. Conf. Ser., 2009, 176, 012023, 1-6. Authors: D. Gabunia, L. Chkhartishvili, O. Tsagareishvili.
Isotopic composition dependences of lattice constant and thermal expansion of b-rhombohedral boron. J. Phys. Conf. Ser., 2009, 176, 012022, 1-10. Authors: D. Gabunia, O. Tsagareishvili, L. Chkhartishvili, L. Gabunia.
Anomalously high capacitance of b-rhombohedral boron induced by structural defects. J. Phys. Conf. Ser., 2009, 176, 012021, 1-9. Authors: O. Tsagareishvili, D. Gabunia, L. Chkhartishvili.
Boron nitride nanosystems of regular geometry. J. Phys. Conf. Ser., 2009, 176, 012014, 1-17. Author: L. Chkhartishvili.
On quasi-classical estimations of boron nanotubes ground-state parameters. J. Phys. Conf. Ser., 2009, 176, 012013, 1-9. Author: L. Chkhartishvili.
Apparent low-frequency charge capacitance of semiconducting boron. Semicond., 2009, 43, 1, 14-20. Authors:O. A. Tsagareishvili, L. S. Chkhartishvili, D. L. Gabunia.
Novel approach to estimation of ground state energies of shallow and deep donors in tetrahedrally bonded semiconductors. Int. J. Nano Syst., 2008, 1, 1, 99-104. Authors: P. Kervalishvili, Z. Gogua, L. Chkhartishvili.
Effect of the isotopic composition on the lattice parameter of boron. Powder Metall. Met. Ceram., 2008, 47, 9-10, 616-621. Authors: L. S. Chkhartishvili, D. L. Gabunia, O. A. Tsagareishvili.
Novel approach to estimation of ground state energies of shallow and deep donors in tetrahedrally bonded semiconductors. Bull. Georg. Natl. Acad. Sci. (New Ser.), 2008, 2, 1, 57-65. Authors: Z. Gogua, L. Chkhartishvili, G. Kantidze.
Conversion of divacancies at isochronous annealing of irradiated p-Si crystals. Ukr. J. Phys., 2007, 52, 12, 1162-1164. Authors: T. A. Pagava, L. S. Chkhartishvili, N. I. Maisuradze, E. R. Kutelia.
Criterion of electric current thermal switching in solids. Mater. Sci. Ind. J., 2007, 3, 1, 43-46. Author: L. S. Chkhartishvili.
Estimation of the isotopic effect on the melting parameters of boron. Inorg. Mater., 2007, 43, 6, 594-596. Authors: L. S. Chkhartishvili, D. L. Gabunia, O. A. Tsagareishvili.
Concentration of radiation defects with almost isoenergetical levels in silicon. Radiat. Eff. Defects Solids, 2006, 161, 12, 709-713. Authors: T. Pagava, L. Chkhartishvili, N. Maisuradze.
Zero-point vibration energy within quasi-classical approximation: Boron nitrides. Proc. TSU (Phys.), 2006, 40, 130-138. Author: L. Chkhartishvili.
Density of electron states in wurtzite-like boron nitride: A quasi-classical calculation. Mater. Sci. Ind. J., 2006, 2, 1, 18-23. Author: L. Chkhartishvili.
Analytical optimization of the lattice parameter using the binding energy calculated in the quasi-classical approximation. Phys. Solid State, 2006, 48, 5, 846-853. Author: L. S. Chkhartishvili.
Dependence of the electron Hall mobility in proton irradiated silicon on the annealing temperature. Bull. Georg. Acad. Sci., 2005, 172, 2, 237-239. Authors: T. Pagava, L. Chkhartishvili, N. Maisuradze, G. Mtskeradze, N. Khasia.
Influence of the charge state of non-equilibrium vacancies on the formation and annealing kinetics of radiation-induced defects in n-Si. Ukr. J. Phys., 2005, 50, 5, 471-476. Authors: T. A. Pagava, E. R. Kutelia, N. I. Maisuradze, B. G. Eristavi, L. S. Chkhartishvili.
Iterative solution of the secular equation. Math. Notes, 2005, 77, 1, 273-279. Author: L. S. Chkhartishvili.
Estimation of isotopic composition effect on substance melting temperature. Bull. Georg. Acad. Sci., 2004, 170, 3, 530-532. Authors: L. Chkhartishvili, D. Gabunia, O. Tsagareishvili, V. Metreveli.
Quasi-classical estimates of the lattice constant and band gap of a crystal: Two-dimensional boron nitride. Phys. Solid State, 2004, 46, 11, 2126-2133. Author: L. S. Chkhartishvili.
Oscillatory dependence of electron Hall mobility on the annealing temperature for irradiated silicon. Ukr. J. Phys., 2004, 49, 10, 1006-1008. Authors: T. A. Pagava, L. S. Chkhartishvili.
Quasi-classical approach: Electronic structure of cubic boron nitride crystals. J. Solid State Chem., 2004, 177, 2, 395-399. Author: L. Chkhartishvili.
Volume of the intersection of three spheres. Math. Notes, 2001, 69, 3, 421-428. Author: L. S. Chkhartishvili.
Quasi-classical determination of electronic energies and vibration frequencies in boron compounds. J. Solid State Chem., 2000, 154, 1, 148-152. Authors: L. Chkhartishvili, D. Lezhava, O. Tsagareishvili.
Calculation of the lateral expansion rate of a strong-field domain in supercritically doped Gunn devices. Radio Eng. Electron. Phys., 1984, 29, 11, 35-38. Authors: L. S. Chkhartishvili, Z. N. Chigogidze, N. P. Khuchua.
Two mechanisms of annealing of divacancies in irradiated n-Si crystals. Ukr. J. Phys., 2010, 55, 11, 1195-2000. Authors: T. A. Pagava, N. T. Bzhalava, N. I. Maisuradze, D. Z. Khocholava, L. S. Chkhartishvili.
Conference Papers
Relative stability of boron quasi-planar clusters. In: Proc. Int. Conf. “Advanced Materials & Technologies”, 2015, Tbilisi, Universal, 42-46. Authors: L. Chkhartishvili, R. Becker, R. Avci.
Effective atomic charges and dipole moment of small boron clusters. In: Proc. ICANM 2015: Int. Conf. & Exh. Adv. & Nano Mater., 2015, Ottawa, IAEMM, 130-147. Authors: L. Chkhartishvili, R. Becker.
Temperature-dependent morphological changes in InP based nanowires. In: Proc. ICANM 2015: Int. Conf. & Exh. Adv. & Nano Mater., 2015, Ottawa, IAEMM, 1-7. Authors: L. Chkhartishvili, D. Jishiashvili, Z. Shiolashvili, N. Makhatadze, A. Jishiashvili, D. Buadze.
New nanoalloys for modifying the steel. In: Proc. 2nd Int. Conf. “Modern Technologies and Methods of Inorganic Materials Science”, 2015, Tbilisi, Sachino, 228 231. Authors: A. Gachechiladze, B. Margiev, R. Chedia, A. Oakley, L. Chkhartishvili, O. Tsagareishvili.
Antifrictional metallic materials modified with hexagonal boron nitride. In: Proc. 2nd Int. Conf. “Modern Technologies and Methods of Inorganic Materials Science”, 2015, Tbilisi, Sachino, 121-131. Authors: A. Gachechiladze, O. Tsagareishvili, M. Darchiashvili, B. Margiev, L. Rukhadze, L. Chkhartishvili.
Investigation of vapor–liquid–solid grown tapered germanium nitride nanowires. In: Proc. ICANM 2014: Int. Conf. & Exh. Adv. & Nano Mater., 2014, Calgary, IAEMM, 119-126. Authors: D. Jishiashvili, L. Chkhartishvili, Z. Shiolashvili, N. Makhatadze, V. Gobronidze, A. Jishiashvili.
Neutron detectors based on 10B-containing nanomaterials. In: Nuclear Radiation Nanosensors and Nanosensory Systems, 2014, Tbilisi, Publ. House Tech. Univ., 81 83. Authors: L. Chkhartishvili, O. Tsagareishvili, G. Tavadze.
Effective Hall mobility of charge carriers in semiconductors with nano-sized “metallic” inclusions: Irradiated silicon. In: Proc. ICANM 2013: Int. Conf. & Exh. Adv. & Nano Mater., 2013, Quebec, IAEMM, 280-287. Authors: L. Chkhartishvili, T. Pagava.
Effect of nanocrystalline boron nitride on wear processes in brass. In: Proc. ICANM 2013: Int. Conf. & Exh. Adv. & Nano Mater., 2013, Quebec, IAEMM, 245-252. Authors: L. Chkhartishvili, M. Darchiashvili, A. Gachechiladze, B. Margiev, L. Rukhadze, O. Tsagareishvili.
Self-catalytic growth of germanium and indium based 1D nanostructures. In: Proc. ICANM 2013: Int. Conf. & Exh. Adv. & Nano Mater., 2013, Quebec, IAEMM, 22-29. Authors: D. Jishiashvili, L. Chkhartishvili, L. Kiria, Z. Shiolashvili, N. Makhatadze, A. Jishiashvili, V. Gobronidze.
Geometry of all-boron nanotubes with reduced numbers of bonds. In: Trans. Int. Sci. Conf. Dedic. 90th Anniv. GTU “Basic Paradigms in Science and Technology Development for the 21st Century”, 2012, Tbilisi, Publ. House Tech. Univ., 383-386. Author: L. Chkhartishvili.
Morphology model for nano-powdered boron nitride lubricants. In: Cont. 2nd Int. Conf. “Nanotechnologies”, 2012, Tbilisi, Nekeri, 86-99. Author: L. Chkhartishvili.
Geometry of all-boron nanotubes with reduced numbers of bonds. In: Cont. 2nd Int. Conf. “Nanotechnologies”, 2012, Tbilisi, Nekeri, 81-85. Author: L. Chkhartishvili.
10B-based materials for neutron-shielding. In: Proc. 1st Int. Conf. “Modern Technologies and Methods of Inorganic Materials Science”, 2012, Tbilisi, Meridian, 188-202. Authors: L. Chkhartishvili, O. Tsagareishvili, D. Gabunia.
Binding energies and electron energy levels of impurity atoms in crystallographic voids. In: Nauka i inovwacja, 15, 2011, Przemyśl, Nauka i studia, 14-24. Authors: L. S. Chkhartishvili, M. D. Darchiashvili.
Some aspects of use of boron-containing materials for neutron shield. In: Proc. 4th Int. Boron Symp., 2009, Eskisehir, Osmangazi Univ., 257-266. Authors: O. Tsagareishvili, L. Chkhartishvili, D. Gabunia, A. Gachechiladze, S. Shalamberidze, L. Gabunia, M. Tushishvili.
Electro-physical and physical-mechanical properties of cobalt-doped boron. In: Proc. 4th Int. Boron Symp., 2009, Eskisehir, Osmangazi Univ., 171-177. Authors: M. Darchiashvili, L. Chkhartishvili, G. Darsavelidze, O. Tsagareishvili, D. Gabunia.
Equilibrium geometries of the boron nitride layered nanosystems. In: Proc. 4th Int. Boron Symp., 2009, Eskisehir, Osmangazi Univ., 161-170. Author: L. Chkhartishvili.
Molar binding energy of the boron nanosystems. In: Proc. 4th Int. Boron Symp., 2009, Eskisehir, Osmangazi Univ., 153-160. Author:L. Chkhartishvili.
On technological process of synthesis of boron carbide nanodispersive powders. In: Proc. 4th Int. Boron Symp., 2009, Eskisehir, Osmangazi Univ., 67-71. Authors:A. Gachechiladze, D. Gabunia, A. Mikeladze, O. Tsagareishvili, L. Chkhartishvili.
Asymptotical (quasi-classical) approach to the substance space and electronic structures. In: Proc. Int. Sci. Conf. FMNS, 2, 2005, Blagoevgrad: SWU, 245-254. Author:L. Chkhartishvili.
Quasi-classical analysis of boron-nitride binding. In: Proc. 2nd Int. Boron Symp., 2004, Eskisehir: Osmangazi Univ., 165-171. Author:L. Chkhartishvili.
Ground state parameters of wurtzite-like boron nitride: Quasi-classical estimations. In: Proc. 1st Int. Boron Symp., 2002, Kutahya, Dumlupinar Univ., 139-143. Author:L. Chkhartishvili.
Dependence of b-boron conductance on the frequency and the electric current value. In: Proc. 9th Int. Symp. Boron, Borides & Rel. Comp., 1987, Duisburg, UDG, 360-361. Authors: L. S. Chkhartishvili, G. P. Tsiskarishvili, O. A. Tsagareishvili, G. G. Gvelesiani, J. N. Tsikaridze.
On the nature of negative magnetoresistance of b-boron. In: Proc. 9th Int. Symp. Boron, Borides & Rel. Comp., 1987, Duisburg, UDG, 357-357. Authors: L. S. Chkhartishvili, G. P. Tsiskarishvili, G. V. Tsagareishvili, J. N. Tsikaridze, A. G. Khvedelidze.
Honors and Awards
Georgian Physical Society – Member
Euro Science – Member
American Chemical Society – Member
Athens Institute for Education and Research – Academic Member
International Scientific Committee of the International Symposia on Boron, Borides and Related Materials – Standing Member
Nano Studies – Editor & Publisher
American Journal of Materials Science – Editorial Board Member
European Chemical Bulletin – Editorial Board Member
American Journal of Nano Research and Applications – Editorial Board Member
Eureka: Physical Sciences and Engineering – Editorial Board Member
Kerbala International Journal of Modern Physics – Advisory Board Member
General Course of up-to-date Methodology of Teaching – Iowa State University, 2009
Albert Einstein Award of Excellence in the Field of Physics, 2011
Invited Talks
L. Chkhartishvili et al., On possible nature of metallic conductance of boron–nitrogen compounds. 3rd International Conference “Nanotechnologies”, October 20 – 24, 2014, Tbilisi, Georgia.
L. Chkhartishvili, Semiempirical determination of atomic charges in boron nitrides, 18th International Symposium on Boron, Borides and Related Materials, August 31 – September 5, 2014, Honolulu, Hawaii, USA.
L. Chkhartishvili, Geometry of boron nitride nanosystems, International Conference and Exhibtion on Advanced and Nano Materials (ICANM – 2013), August 12 – 13, 2013, Quebec-City, Quebec, Canada.
L. Chkhartishvili et al., 10B powder-based neutron shield coating materials, 17th International Symposium on Boron, Borides and Related Materials, September 11 – 17, 2011, Istanbul, Turkey.
ADDRESS
Science Publishing Group
1 Rockefeller Plaza,
10th and 11th Floors,
New York, NY 10020
U.S.A.
Tel: (001)347-983-5186